Description

(1) Please use A4 size papers.
(2) The lab report should be submitted online individually.
(3) Use Proteus 8.10 for simulation before the lab session. In the Proteus library, you should be able to find all the components used in the schematics. The lab report must include both the simulation and measurement results.

1. [Common-Emitter Amplifier]
(a) [40%] Design and build a common-emitter amplifier in Proteus and on the breadboard which has a voltage gain Aυ > 10, using npn BJT 2N3904. Plot VOUT vs VIN. (Hint: First choose an appropriate RC. Second, perform DC sweep to find out a VIN at which the magnitude of slope is more than 10. At the same time, make sure the BJT is in the forward-active region. If not working, change for another RC and repeat the DC sweep analysis again.)
(b) [30%] For Vin = VIN + 0.01sin(2π102 ∙ time), plot Vout = VOUT + υout vs time. Confirm that the amplitude of υout is equal to 0.01 ×
Aυ.
(c) [30%] For Vin = VIN + 0.01sin(2π107 ∙ time), plot Vout = VOUT +
υout vs time. Is the amplitude of υout still equal to 0.01 × Aυ? If not, explain the possible reasons.

2

2N3903, 2N3904

General Purpose Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCBO 60 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC 200 mAdc
Derate above 25°C PD 625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C PD 1.5 12 W
mW/°C
Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RJA 200 °C/W
Thermal Resistance, Junction−to−Case RJC 83.3 °C/W
1. Indicates Data in addition to JEDEC Requirements.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

BULK PACK TAPE & REEL
AMMO PACK

Y = Year
WW = Work Week
= Pb−Free Package

ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 60 − Vdc
Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903
2N3904
2N3903 2N3904 hFE 20
40
35
70
50
100
30
60
15
30 −
−
−
− 150
300
−
−
−
− −
Collector−Emitter Saturation Voltage (Note 2)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) −
− 0.2
0.3 Vdc
Base−Emitter Saturation Voltage (Note 2)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) 0.65 − 0.85
0.95 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903
2N3904 fT 250
300 −
− MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903
2N3904 hie 1.0
1.0 8.0 10 k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903
2N3904 hre 0.1
0.5 5.0
8.0 X 10−4
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3903
2N3904 hfe 50
100 200
400 −
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 40 mhos
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3903
2N3904 NF −
− 6.0
5.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc) td − 35 ns
Rise Time tr − 35 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 ts −
− 175
200 ns
Fall Time tf − 50 ns
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%.
ORDERING INFORMATION
Device Package Shipping†
2N3903RLRM TO−92 2000 / Ammo Pack
2N3904 TO−92 5000 Units / Bulk
2N3904G TO−92
(Pb−Free) 5000 Units / Bulk
2N3904RLRA TO−92 2000 / Tape & Reel
2N3904RLRAG TO−92
(Pb−Free) 2000 / Tape & Reel
2N3904RLRM TO−92 2000 / Ammo Pack
2N3904RLRMG TO−92
(Pb−Free) 2000 / Ammo Pack
2N3904RLRP TO−92 2000 / Ammo Pack
2N3904RLRPG TO−92
(Pb−Free) 2000 / Ammo Pack
2N3904RL1G TO−92
(Pb−Free) 2000 / Tape & Reel
2N3904ZL1 TO−92 2000 / Ammo Pack
2N3904ZL1G TO−92
(Pb−Free) 2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
300 ns
Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS

5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time Figure 6. Rise Time

Figure 7. Storage Time Figure 8. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Figure 10.
h PARAMETERS

30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain IC, COLLECTOR CURRENT (mA) Figure 12. Output Admittance

IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS

IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain

IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region

0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages
IC, COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients

3 3
STRAIGHT LEAD BENT LEAD
T
STRAIGHT LEAD 1.
2. 3.
4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994.
CONTROLLING DIMENSION: INCHES.
CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI­
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.
NOTES:
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.46 0.53
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
K 0.500 — 12.70 —
L 0.250 — 6.35 —
N 0.080 0.105 2.04 2.66
P — 0.100 — 2.54
R 0.135 — 3.43 —
V 0.135 — 3.43 —
NOTES:
BENT LEAD 1.
2. 3.
4. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
CONTROLLING DIMENSION: INCHES.
CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.
SECTION X−X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.021 0.46 0.53
G 0.094 0.102 2.40 2.80
J 0.018 0.024 0.46 0.61
K 0.500 — 12.70 —
N 0.080 0.105 2.04 2.66
P — 0.100 — 2.54
R 0.135 — 3.43 —
V 0.135 — 3.43 —
SECTION X−X

STYLES ON PAGE 2
DOCUMENT NUMBER: 98AON52857E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−92 (TO−226) 1 WATT PAGE 1 OF 2
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 26:
PIN 1. VCC
2. GROUND 2
3. OUTPUT
STYLE 31:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. EMITTER
3. STYLE 7: COLLECTOR
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 12:
PIN 1. MAIN TERMINAL 1 2. GATE
3. MAIN TERMINAL 2
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
STYLE 27:
PIN 1. MT
2. SUBSTRATE
3. MT
STYLE 32:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 3:
PIN 1. ANODE
2. ANODE
STYLE 8: CATHODE
PIN 1. DRAIN
2. GATE
3. SOURCE & SUBSTRATE
CASE 29−10 ISSUE A
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 18:
PIN 1. ANODE
2. CATHODE
3. NOT CONNECTED
STYLE 23:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 28:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 33:
PIN 1. RETURN
2. INPUT
3. OUTPUT
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. STYLE 9: ANODE
PIN 1. BASE 1
2. EMITTER
3. BASE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 19:
PIN 1. GATE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. EMITTER
2. COLLECTOR/ANODE
3. CATHODE
STYLE 29:
PIN 1. NOT CONNECTED
2. ANODE
3. CATHODE
STYLE 34:
PIN 1. INPUT
2. GROUND
3. LOGIC
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
STYLE 20:
PIN 1. NOT CONNECTED
2. CATHODE
3. ANODE
STYLE 25:
PIN 1. MT 1
2. GATE
3. MT 2
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
STYLE 35:
PIN 1. GATE
2. COLLECTOR
3. EMITTER

TO−92 (TO−226) 1 WATT

DOCUMENT NUMBER: 98AON52857E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−92 (TO−226) 1 WATT PAGE 2 OF 2
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

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