Description

1.

2.
3.

4.

5.

6.

7.

8.

9.

10.
Can you explain in your own words how a depletion region is formed after a p-type semiconductor is in contact with an n-type semiconductor?

11.
A silicon p+n junction has doping concentrations of Na = 2 x 1017 cm-3 and Nd = 2 x 1015 cm-3. The cross-sectional area is 10-5 cm2. Calculate (a) Vbi and (b) the junction capacitance at reverse bias VR (i) VR = 1V, (ii) VR = 3V, and (iii) VR =5 V. (c) plot 1/C2 versus VR and identify how the slope and intercept at the voltage axis are related to Nd and Vbi, repectively.